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absolute maximum ratings parameter units i d @ v gs = 12v, t c = 25c continuous drain current 12 * i d @ v gs = 12v, t c = 100c continuous drain current 9.5 i dm pulsed drain current 48 p d @ t c = 25c max. power dissipation 25 w linear derating factor 0.2 w/c v gs gate-to-source voltage 20 v e as single pulse avalanche energy 270 mj i ar avalanche current 12 a e ar repetitive avalanche energy 2.5 mj dv/dt peak diode recovery dv/dt 9.6 v/ns t j operating junction -55 to 150 t stg storage temperature range lead temperature 300 ( 0.063 in./1.6mm from case for 10s) weight 0.98 (typical) g pre-irradiation international rectifier?s r5 tm technology provides high performance power mosfets for space applications. these devices have been characterized for single event effects (see) with useful performance up to an let of 80 (mev/(mg/cm 2 )). the combination of low r ds(on) and low gate charge reduces the power losses in switching applications such as dc to dc converters and motor control. these devices retain all of the well established advantages of mosfets such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters. o c a www.irf.com 1 features: single event effect (see) hardened ultra low r ds(on) identical pre- and post-electrical test conditions repetitive avalanche ratings dynamic dv/dt ratings simple drive requirements ease of paralleling hermetically sealed

radiation hardened JANSR2N7492T2 power mosfet 60v, n-channel thru-hole (to-39) ref: mil-prf-19500/701 irhf57034 technology to-39 product summary part number radiation level r ds(on) i d qpl part number irhf57034 100k rads (si) 0.048 ? 12a* JANSR2N7492T2 irhf53034 300k rads (si) 0.048 ? 12a* jansf2n7492t2 irhf54034 500k rads (si) 0.048 ? 12a* jansg2n7492t2 irhf58034 1000k rads (si) 0.060 ? 12a* jansh2n7492t2 pd - 93791d
irhf57034, JANSR2N7492T2 pre-irradiation 2 www.irf.com thermal resistance parameter min typ max units t est conditions r thjc junction-to-case ? ? 5.0 r thja junction-to-ambient ? ? 175

c/w note: corresponding spice and saber models are available on international rectifier web site.

source-drain diode ratings and characteristics parameter min typ max units t est conditions i s continuous source current (body diode) ? ? 12* i sm pulse source current (body diode) ?? 48 v sd diode forward voltage ? ? 1.5 v t j = 25c, i s = 12a, v gs = 0v t rr reverse recovery time ? ? 100 ns t j = 25c, i f = 12a, di/dt 100a/ s q rr reverse recovery charge ? ? 300 nc v dd 25v t on forward turn-on time intrinsic turn-on time is negligible. turn-on speed is substantially controlled by l s + l d . a

electrical characteristics @ tj = 25c (unless otherwise specified) parameter min typ max units t est conditions bv dss drain-to-source breakdown voltage 60 ? ? v v gs = 0v, i d = 1.0ma ? bv dss / ? t j temperature coefficient of breakdown ? 0.062 ? v/c reference to 25c, i d = 1.0ma voltage r ds(on) static drain-to-source on-state ? ? 0.048 ? v gs = 12v, i d = 9.5a resistance v gs(th) gate threshold voltage 2.0 ? 4.0 v v ds = v gs , i d = 1.0ma g fs forward transconductance 12 ? ? s ( ) v ds >= 15v, i ds = 9.5a i dss zero gate voltage drain current ? ? 10 v ds = 48v ,v gs =0v ??25 v ds = 48v, v gs = 0v, t j = 125c i gss gate-to-source leakage forward ? ? 100 v gs = 20v i gss gate-to-source leakage reverse ? ? -100 v gs = -20v q g total gate charge ? ? 40 v gs =12v, i d = 12a q gs gate-to-source charge ? ? 10 nc v ds = 30v q gd gate-to-drain (?miller?) charge ? ? 15 t d (on) turn-on delay time ? ? 25 v dd = 30v, i d = 12a t r rise time ? ? 100 v gs =12v, r g = 7.5 ? t d (off) turn-off delay time ? ? 35 t f fall time ? ? 30 l s + l d total inductance ? 7.0 ? measured from drain lead (6mm /0.25in. from package) to source lead (6mm /0.25in. from package) with source wires internally bonded from source pin to drain pad c iss input capacitance ? 1160 ? v gs = 0v, v ds = 25v c oss output capacitance ? 530 ? p f f = 1.0mhz c rss reverse transfer capacitance ? 18 ? na ? nh ns a
www.irf.com 3 pre-irradiation irhf57034, JANSR2N7492T2 table 1. electrical characteristics @ tj = 25c, post total dose irradiation parameter up to 500k rads(si) 1 1000k rads (si) 2 units test conditions min max min max bv dss drain-to-source breakdown voltage 60 ? 60 ? v v gs = 0v, i d = 1.0ma v gs(th) gate threshold voltage 2.0 4.0 1.5 4.0 v gs = v ds , i d = 1.0ma i gss gate-to-source leakage forward ? 100 ? 100 na v gs = 20v i gss gate-to-source leakage reverse ? -100 ? -100 v gs = -20 v i dss zero gate voltage drain current ? 10 ? 25 a v ds = 48v, v gs =0v r ds(on) static drain-to-source ? 0.034 ? 0.043 ? v gs = 12v, i d = 9.5a on-state resistance (to-3) r ds(on) static drain-to-source ? 0.048 ? 0.060 ? v gs = 12v, i d = 9.5a on-state resistance (to-39) international rectifier radiation hardened mosfets are tested to verify their radiation hardness capability. the hardness assurance program at international rectifier is comprised of two radiation environments. every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the to-3 package. both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. radiation characteristics 1. part numbers irhf57034 (JANSR2N7492T2), irhf53034 (jansf2n7492t2) and irhf54034 (jansg2n7492t2) 2. part number irhf58034 (jansh2n7492t2) fig a. single event effect, safe operating area v sd diode forward voltage ? 1.5 ? 1.5 v v gs = 0v, i s = 12a international rectifier radiation hardened mosfets have been characterized in heavy ion environment for single event effects (see). single event effects characterization is illustrated in fig. a and table 2.

ion let energy range v ds (v) (mev/(mg/cm 2 )) (mev) (m) @v gs =0v @v gs = -5v @v gs = -10v @v gs =-15v @v gs =-20v br 37.3 285 36.8 60 60 60 60 40 xe 63 300 29 46 46 35 25 15 au 86.6 2068 106 35 35 27 20 14 table 2. single event effect safe operating area 0 10 20 30 40 50 60 70 -20 -15 -10 -5 0 vgs vds br i au
irhf57034, JANSR2N7492T2 pre-irradiation 4 www.irf.com

15 0.1 1 10 100 1000 0.1 1 10 100 20s pulse width t = 25 c j top bottom vgs 15v 12v 10v 9.0v 8.0v 7.0v 6.0v 5.0v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 5.0v 0.1 1 10 100 1000 0.1 1 10 100 20s pulse width t = 150 c j top bottom vgs 15v 12v 10v 9.0v 8.0v 7.0v 6.0v 5.0v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 5.0v 1 10 100 1000 5 7 9 11 13 15 v = 25v 20s pulse width ds v , gate-to-source voltage (v) i , drain-to-source current (a) gs d t = 25 c j t = 150 c j -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 2.5 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d 12v 12a
www.irf.com 5 pre-irradiation irhf57034, JANSR2N7492T2

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1 10 100 0 500 1000 1500 2000 2500 v , drain-to-source voltage (v) c, capacitance (pf) ds v c c c = = = = 0v, c c c f = 1mhz + c + c c shorted gs iss gs gd , ds rss gd oss ds gd c iss c oss c rss 0 10 20 30 40 50 0 4 8 12 16 20 q , total gate charge (nc) v , gate-to-source voltage (v) g gs for test circuit see figure i = d 13 12a v = 12v ds v = 30v ds v = 48v ds 0.1 1 10 100 0.0 0.5 1.0 1.5 2.0 2.5 3.0 v ,source-to-drain voltage (v) i , reverse drain current (a) sd sd v = 0 v gs t = 25 c j t = 150 c j 1 10 100 1000 v ds , drain-tosource voltage (v) 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 150c single pulse 1ms 10ms operation in this area limited by r ds (on) 100s
irhf57034, JANSR2N7492T2 pre-irradiation 6 www.irf.com $

v ds 9 0% 1 0% v gs t d(on) t r t d(off) t f $
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0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) v gs 25 50 75 100 125 150 0 4 8 12 16 t , case temperature ( c) i , drain current (a) c d limited by package
www.irf.com 7 pre-irradiation irhf57034, JANSR2N7492T2 q g q gs q gd v g charge d.u.t. v d s i d i g 3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - +, !

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t p v (br)dss i as r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v 25 50 75 100 125 150 0 100 200 300 400 500 600 starting t , junction temperature ( c) e , single pulse avalanche energy (mj) j as i d top bottom 5.4a 7.6a 12a v gs
irhf57034, JANSR2N7492T2 pre-irradiation 8 www.irf.com pulse width 300 s; duty cycle 2% total dose irradiation with v gs bias. 12 volt v gs applied and v ds = 0 during irradiation per mil-std-750, method 1019, condition a. total dose irradiation with v ds bias. 48 volt v ds applied and v gs = 0 during irradiation per mll-std-750, method 1019, condition a. repetitive rating; pulse width limited by maximum junction temperature. v dd = 25v, starting t j = 25c, l= 3.74mh peak i l = 12a, v gs = 12v i sd 12a, di/dt 244a/ s, v dd 60v, t j 150c case outline and dimensions ? to-205af (modified to-39) footnotes: ! " # ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 ir leominster : 205 crawford st., leominster, massachusetts 01453, usa tel: (978) 534-5776 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . data and specifications subject to change without notice. 04/2006

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